한국정보디스플레이학회:학술대회논문집
- 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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- Pages.1308-1311
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- 2007
Structural Effect on Backlight Induced-leakage Current in Amorphous Silicon Thin Film Transistor
- Kim, Sho-Yeon (School of Electronics, Telecommunications and Computer Engineering, Korea Aerospace University) ;
- Kim, Tae-Hyun (School of Electronics, Telecommunications and Computer Engineering, Korea Aerospace University) ;
- Jeon, Jae-Hong (School of Electronics, Telecommunications and Computer Engineering, Korea Aerospace University) ;
- Choe, Hee-Hwan (School of Electronics, Telecommunications and Computer Engineering, Korea Aerospace University) ;
- Lee, Kang-Woong (School of Electronics, Telecommunications and Computer Engineering, Korea Aerospace University) ;
- Seo, Jong-Hyun (Department of Materials Science and Engineering, Korea Aerospace University)
- 발행 : 2007.08.27
초록
Leakage current produced by backside illumination on bottom-gated amorphous silicon thin film transistor has been investigated. The experimental results show that the leakage current of bottomgated structure is significantly dependent on the shape of amorphous silicon pattern. A proper design of amorphous silicon pattern has been suggested in viewpoint of reducing the leakage current as well as mass production.