Study on the characteristics of the organic thin-film transistors according to the gate electrode surface treatments

  • Kim, Hye-Min (Dept. of Electrical, Information & Control Engineering, Hongik University) ;
  • Park, Jae-Hoon (Dept. of Electrical, Information & Control Engineering, Hongik University) ;
  • Bong, Kang-Wook (Dept. of Electrical, Information & Control Engineering, Hongik University) ;
  • Kang, Jong-Mook (Dept. of Electrical, Information & Control Engineering, Hongik University) ;
  • Lee, Hyun-Jung (Dept. of Electrical, Information & Control Engineering, Hongik University) ;
  • Han, Chang-Wook (LG.PHILIPS LCD R&D Center) ;
  • Choi, Jong-Sun (Dept. of Electrical, Information & Control Engineering, Hongik University)
  • 발행 : 2007.08.27

초록

In this report, the effects of chemical surface treatments of ITO gate electrodes of OTFTs have been studied by using acid and base solutions. As a result, it is observed that the threshold voltage of OTFTs could be influenced and modified by the surface treatments. The device with an ITO gate electrode surface-treated by a base solution shows the lowest threshold voltage of -7.66 V, while the threshold voltages are about -13.51 V and -15.3 V for the devices without a surface treatment and with the acid solution treatment, respectively. It is thought that the work function of ITO electrode surface might be affected by the surface treatments, thereby influencing the threshold voltage.

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