Dry Etching Behaviors of ZnO and $Al_2O_3$ Films in the Fabrication of Transparent Oxide TFT for AMOLED Display Application

We provide a newly developed dry etching process for the fabrication of ZnO-based oxide TFTs. The etching characteristics of ZnO (active layer) and $Al_2O_3$ (gate insulator) thin films were systematically investigated when the etching gas mixtures and their mixing ratios were varied in the heliconplasma etching system.