대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

Rapid Thermal Annealing 후열처리 조건에 따른 ZnO 박막의 특성

Characteristics of ZnO thin films depending on Rapid Thermal Annealing

  • 김지홍 (고려대학교 전자전기공학과) ;
  • 조대형 (고려대학교 전자전기공학과) ;
  • 구상모 (고려대학교 전자전기공학과) ;
  • 문병무 (광운대학교 전자재료공학과)
  • Kim, Ji-Hong (Department of Electrical Engineering, Korea University) ;
  • Cho, Dae-Hyung (Department of Electrical Engineering, Korea University) ;
  • Koo, Sang-Mo (Department of Electrical Engineering, Korea University) ;
  • Moon, Byung-Moo (Department of Electronic Materials Engineering, Kwangwoon University)
  • 발행 : 2007.11.02
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초록

In this paper, ZnO thin films were deposited by pulsed laser deposition (PLD) on $Al_2O_3$ (alumina) at room temperature in various $O_2$ ambient. Rapid thermal annealing (RTA) has been performed at temperatures from $400^{\circ}C$ to $700^{\circ}C$. The effects of temperature and ambient on the structural property of ZnO films were examined by x-ray diffractometer (XRD) and atomic force microscopy (AFM), respectively. The results show that the (002)-oriented ZnO thin films on non-single crystal alumina were obtained in over 30mTorr ambient at all RTA temperatures including room temperature. The foil-width half maximum (FWHM) of (002) peak decreases as the RTA temperature increases, which indicates that ZnO thin films with RTA have improved crystalline quality.

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