Controlled Ga-doped ZnO NWs Synthesized by PLD in Furnace

PLD in Furnace 장비에 의한 Ga-Doped ZnO 나노선 합성 제어

  • Song, Yong-Won (Center for Energy Materials Research, Korea Institute of Science and Technology) ;
  • Lee, Sang-Gyu (Center for Energy Materials Research, Korea Institute of Science and Technology) ;
  • Chang, Seong-Pil (Center for Energy Materials Research, Korea Institute of Science and Technology) ;
  • Son, Chang-Wan (Center for Energy Materials Research, Korea Institute of Science and Technology) ;
  • Leem, Jae-Hyeon (Center for Energy Materials Research, Korea Institute of Science and Technology) ;
  • Lee, Sang-Yeol (Center for Energy Materials Research, Korea Institute of Science and Technology)
  • 송용원 (에너지재료연구단, 한국과학기술연구원) ;
  • 이상규 (에너지재료연구단, 한국과학기술연구원) ;
  • 장성필 (에너지재료연구단, 한국과학기술연구원) ;
  • 손창완 (에너지재료연구단, 한국과학기술연구원) ;
  • 임재현 (에너지재료연구단, 한국과학기술연구원) ;
  • 이상렬 (에너지재료연구단, 한국과학기술연구원)
  • Published : 2007.11.02

Abstract

We synthesize ZnO nanowires (NWs) doped with 3 wt% Ga on sapphire substrate using a hot-walled pulsed laser deposition (PLD) system named PLD in Furnace. A proprietary target rotating system is employed in the furnace to ensure the homogeneity of the deposition. The kinetic energy of the laser-ablazed ZnO is controlled for the optimization of NW formation. The physical properties of the resultant NWs are presented.

Keywords