Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2007.11a
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- Pages.112-113
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- 2007
Controlled Ga-doped ZnO NWs Synthesized by PLD in Furnace
PLD in Furnace 장비에 의한 Ga-Doped ZnO 나노선 합성 제어
- Song, Yong-Won (Center for Energy Materials Research, Korea Institute of Science and Technology) ;
- Lee, Sang-Gyu (Center for Energy Materials Research, Korea Institute of Science and Technology) ;
- Chang, Seong-Pil (Center for Energy Materials Research, Korea Institute of Science and Technology) ;
- Son, Chang-Wan (Center for Energy Materials Research, Korea Institute of Science and Technology) ;
- Leem, Jae-Hyeon (Center for Energy Materials Research, Korea Institute of Science and Technology) ;
- Lee, Sang-Yeol (Center for Energy Materials Research, Korea Institute of Science and Technology)
- 송용원 (에너지재료연구단, 한국과학기술연구원) ;
- 이상규 (에너지재료연구단, 한국과학기술연구원) ;
- 장성필 (에너지재료연구단, 한국과학기술연구원) ;
- 손창완 (에너지재료연구단, 한국과학기술연구원) ;
- 임재현 (에너지재료연구단, 한국과학기술연구원) ;
- 이상렬 (에너지재료연구단, 한국과학기술연구원)
- Published : 2007.11.02
Abstract
We synthesize ZnO nanowires (NWs) doped with 3 wt% Ga on sapphire substrate using a hot-walled pulsed laser deposition (PLD) system named PLD in Furnace. A proprietary target rotating system is employed in the furnace to ensure the homogeneity of the deposition. The kinetic energy of the laser-ablazed ZnO is controlled for the optimization of NW formation. The physical properties of the resultant NWs are presented.
Keywords