Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Effect of As diffusion on the electrical property of ZnO grown on GaAs substrate by pused laser deposition

펄스 레이저 증착 방식으로 GaAs 기판에 성장된 ZnO의 As 확산에 의한 전기적 특성

  • Son, Chang-Wan (Center for Energy Materials Research, Korea Institute of Science and Technology) ;
  • Chang, Seong-Phil (Center for Energy Materials Research, Korea Institute of Science and Technology) ;
  • Lee, Sang-Gyu (Center for Energy Materials Research, Korea Institute of Science and Technology) ;
  • Leem, Jae-Hyeon (Center for Energy Materials Research, Korea Institute of Science and Technology) ;
  • Song, Yong-Won (Center for Energy Materials Research, Korea Institute of Science and Technology) ;
  • Lee, Sang-Yeol (Center for Energy Materials Research, Korea Institute of Science and Technology)
  • 손창완 (한국과학기술연구원 에너지재료연구단) ;
  • 장성필 (한국과학기술연구원 에너지재료연구단) ;
  • 이상규 (한국과학기술연구원 에너지재료연구단) ;
  • 임재현 (한국과학기술연구원 에너지재료연구단) ;
  • 송용원 (한국과학기술연구원 에너지재료연구단) ;
  • 이상렬 (한국과학기술연구원 에너지재료연구단)
  • Published : 2007.11.02
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Abstract

In order to form a p-type ZnO thin film, ZnO thin film is deposited by pulsed laser deposition(PLD) on GaAs substrate followed by nermal treatment that ensures the diffusion of As atoms from the GaAs substrate to the ZnO thin films. Photoluminescence (PL) measurement reveals that the improved qualify of ZnO thin films is acquired at the growth temperature of $400^{\circ}C$. It is ZnO film grown at $100^{\circ}C$ that shows the change from n-type to p-type by the thermal treatment. Measured carrier concentration in the film is changed from $-5.70{\times}10^{13}\;to\;9.09{\times}10^{18}$.

Keywords