Processing optimization of Ga-doped ZnO for transparent electrode application using DOE

실험계획법을 이용한 GZO 투명전극 성장의 공정 최적화

  • Lee, Sang-Gyu (Center for Energy Materials Research, Korea Institute of Science and Technology) ;
  • Chang, Seong-Pil (Center for Energy Materials Research, Korea Institute of Science and Technology) ;
  • Son, Chang-Wan (Center for Energy Materials Research, Korea Institute of Science and Technology) ;
  • Leem, Jae-Hyeon (Center for Energy Materials Research, Korea Institute of Science and Technology) ;
  • Song, Yong-Won (Center for Energy Materials Research, Korea Institute of Science and Technology) ;
  • Lee, Sang-Yeol (Center for Energy Materials Research, Korea Institute of Science and Technology) ;
  • Han, Seung-Soo (Department of Information Engineering, Myongji University)
  • 이상규 (한국과학기술연구원 에너지재료연구단) ;
  • 장성필 (한국과학기술연구원 에너지재료연구단) ;
  • 손창완 (한국과학기술연구원 에너지재료연구단) ;
  • 임재현 (한국과학기술연구원 에너지재료연구단) ;
  • 송용원 (한국과학기술연구원 에너지재료연구단) ;
  • 이상렬 (한국과학기술연구원 에너지재료연구단) ;
  • 한승수 (명지대학교 정보공학과)
  • Published : 2007.11.02

Abstract

Microstructure and electrical properties of Ga-doped ZnO (GZO) films grown on $Al_2O_3$ templates by Pulsed Laser Deposition (PLD) are investigated utilizing X-ray diffraction method and Hall measurement, respectively. In order to determine the optimized operating condition of the PLD, statistical design of experiment (DOE) is employed. It provides the systematic and efficient methodology for characterization and modeling of PLD processing with a relatively small number of experiments. The most optimized recipe of the process factors is obtained by response optimizer in Minitab.

Keywords