Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Optimization of active layer for the fabrication of transparent thin film transistor based on ZnO

ZnO 기반의 투명 박막 트랜지스터 제작을 위한 Active-layer의 최적화에 대한 연구

  • Chang, Seong-Pil (Center for Energy Materials Research, Korea Institute of Science and Technology) ;
  • Lee, Sang-Gyu (Center for Energy Materials Research, Korea Institute of Science and Technology) ;
  • Son, Chang-Wan (Center for Energy Materials Research, Korea Institute of Science and Technology) ;
  • Leem, Jae-Hyeon (Center for Energy Materials Research, Korea Institute of Science and Technology) ;
  • Song, Yong-Won (Center for Energy Materials Research, Korea Institute of Science and Technology) ;
  • Ju, Byung-Kwon (Department of Electronics and Electrical Engineering, Korea University) ;
  • Lee, Sang-Yeol (Center for Energy Materials Research, Korea Institute of Science and Technology)
  • 장성필 (한국과학기술연구원 에너지재료연구단) ;
  • 이상규 (한국과학기술연구원 에너지재료연구단) ;
  • 손창완 (한국과학기술연구원 에너지재료연구단) ;
  • 임재현 (한국과학기술연구원 에너지재료연구단) ;
  • 송용원 (한국과학기술연구원 에너지재료연구단) ;
  • 주병권 (고려대학교 전자전기공학과) ;
  • 이상렬 (한국과학기술연구원 에너지재료연구단)
  • Published : 2007.11.02
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Abstract

We have observed electrical properties of ZnO thin films for the fabrication of transparent thin film transistor. ZnO thin films were deposited on $Al_2O_3$(0001) substrate at various temperatures by pulsed laser deposition(PLD). The third of harmonic(355nm) Nd:YAG laser was used for pulsed laser deposition. X-ray diffraction(XRD), field emission-scanning electron microscope(FE-SEM), and photoluminescence were used to characterize physical and optical properties of ZnO thin film.. The results indicated the ZnO film showed good optical properties as increasing temperatures, with low FWHM of exciton-related peak and XRD(0002) peak.

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