Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Fabrication of a Nano-sized Conical-type Tungsten Field-emitter Based on Carbon Nanotubes

탄소나노튜브를 이용한 텅스텐 나노팁 전계방출기 제작

  • Park, Chang-Kyun (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Kim, Jong-Pil (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Kim, Young-Kwang (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Yun, Sung-Jun (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Kim, Won (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Park, Jin-Seok (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University)
  • 박창균 (한양대학교 전자전기제어계측공학과) ;
  • 김종필 (한양대학교 전자전기제어계측공학과) ;
  • 김영광 (한양대학교 전자전기제어계측공학과) ;
  • 윤성준 (한양대학교 전자전기제어계측공학과) ;
  • 김원 (한양대학교 전자전기제어계측공학과) ;
  • 박진석 (한양대학교 전자전기제어계측공학과)
  • Published : 2007.11.02
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Abstract

Nano-sized conical-type tungsten(W) field-emitters based on carbon nanotubes(CNTs) are fabricated with the configuration of CNTs/catalyst/buffer/W-tip by adopting various buffer layers, such as TiN, Al, Al/TiN, and Al/hi/TiN. This study focuses on elucidating how the buffer layers affect the structural properties of CNTs and the electron-emission characteristics of CNT-emitters. Field-emission scanning electron microscopy(FESEM) and high-resolution transmission electron microscopy(HRTEM) are used to monitor the nanostructures and surface morphologies of all the catalysts and CNTs grown. The crystalline structure of CNTs is also characterized by Raman spectroscopy. Furthermore, the measurement of field-emission characteristics for all the field-emitters fabricated shows that the emitter using the Al/Ni/TiN stacked buffer reveals the most excellent performances, such as maximum emission current of $202{\mu}A$, threshold field of 2.08V/${\mu}m$, and long-term (up to 24h) stability of emission current.

Keywords