Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.11a
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- Pages.323-324
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- 2007
Realization and Electrical-Optical Properties of AZO/p-Si UV Photodetector
AZO/p-Si 자외선 수광소자의 전기적.광학적 특성
- Oh, Sang-Hyun (School of Electrical Electronic and Information Engineering, Wonkwang Univ.) ;
- Jeong, Yun-Hwan (School of Electrical Electronic and Information Engineering, Wonkwang Univ.) ;
- Chen, Hao (School of Electrical Electronic and Information Engineering, Wonkwang Univ.) ;
- Park, Choon-Bae (School of Electrical Electronic and Information Engineering, Wonkwang Univ.)
- 오상현 (원광대학교 전기전자 및 정보공학부) ;
- 정윤환 (원광대학교 전기전자 및 정보공학부) ;
- 진호 (원광대학교 전기전자 및 정보공학부) ;
- 박춘배 (원광대학교 전기전자 및 정보공학부)
- Published : 2007.11.01
Abstract
Investigation of improving the properties of UV photodetector which uses the wide bandgap of ZnO are under active progress. In this paper, transparent conducting aluminum-doped Zinc oxide films(AZO) were prepared by rf magnetron sputtering on glass(corning 1737) and p-Si substrate, were then annealed at temperature