Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.11a
- /
- Pages.136-137
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- 2007
Electrical characteristics of ZnO nanowire - CdTe nanoparticle nano floating gate memory device
ZnO 나노선과 CdTe 나노입자를 이용한 NFGM 소자의 전기적 특성
- Yoon, Chang-Joon (Department of Electrical Engineering, Korea University) ;
- Yeom, Dong-Hyuk (Department of Electrical Engineering, Korea University) ;
- Kang, Jeong-Min (Department of Electrical Engineering, Korea University) ;
- Jeong, Dong-Young (Department of Electrical Engineering, Korea University) ;
- Kim, Mi-Hyun (Korea Basic Science Institute) ;
-
Koh, Eui-Kwan
(Korea Basic Science Institute)
;
-
Koo, Sang-Mo
(Kwangwoon University)
;
-
Kim, Sang-Sig
(Department of Electrical Engineering, Korea University)
- 윤창준 (고려대학교 전기공학과) ;
- 염동혁 (고려대학교 전기공학과) ;
- 강정민 (고려대학교 전기공학과) ;
- 정동영 (고려대학교 전기공학과) ;
- 김미현 (한국기초과학연구소) ;
-
고의관
(한국기초과학연구소)
;
-
구상모
(광운대학교 전자재료공학부)
;
-
김상식
(고려대학교 전기공학과)
- Published : 2007.11.01
Abstract
In this study, a single ZnO nanowire - CdTe nanoparticle nano floating gate memory (NFGM) device is successfully fabricated and characterized their memory effects by comparison of electrical characteristics of ZnO nanowire-based field effect transistor (FET) devices with CdTe nanoparticles embedded in the