Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.11a
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- Pages.68-69
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- 2007
Investigation of n+ Emitter Formation Using Spin-On Dopants for Crystalline Si Solar Cells
Spin-On Dopants를 이용한 결정질 실리콘 태양전지의 n+ 에미터 형성에 관한 연구
- Cho, Kyeong-Yeon (Sejong Univ, Strategic Energy Research Institute) ;
- Lee, Ji-Hoon (Sejong Univ, Strategic Energy Research Institute) ;
- Choi, Jun-Young (Sejong Univ, Strategic Energy Research Institute) ;
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Lee, Soo-Hong
(Sejong Univ, Strategic Energy Research Institute)
- 조경연 (세종대학교 전략에너지 개발 사업단) ;
- 이지훈 (세종대학교 전략에너지 개발 사업단) ;
- 최준영 (세종대학교 전략에너지 개발 사업단) ;
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이수홍
(세종대학교 전략에너지 개발 사업단)
- Published : 2007.11.01
Abstract
To make cost-effective solar cells, We have to use low cost material or make short process time or high temperature process. In solar cells, formation of emitter is basic and important technique according to build-up P-N junction. Diffusion process using spin-on dopants has all of this advantage. In this paper, We investigated n+ emitter formation spin-on dopants to apply crystalline silicon solar cells. We known variation of sheet resistance according to variation of temperature and single-crystalline and multi-crystalline silicon wafer using Honeywell P-8545 phosphorus spin-on dopants. We obtain uniformity of sheet resistance within 3~5% changing RPM of spin coater.