Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.11a
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- Pages.66-66
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- 2007
Ferroelectric characteristics of PZT capacitors fabricated by using chemical mechanical polishing process with change of process parameters
화학적기계적연마 공정으로 제조한 PZT 캐패시터의 공정 조건에 따른 강유전 특성 연구
- Jun, Young-Kil (Chosun Univ.) ;
- Jung, Pan-Gum (Chosun Univ.) ;
- Ko, Pil-Ju (Chosun Univ.) ;
- Kim, Nam-Hoon (Sungkyunkwan Univ.) ;
- Lee, Woo-Sun (Chosun Univ.)
- Published : 2007.11.01
Abstract
Lead zirconate titanate (PZT) is one of the most attractive perovskite-type materials for ferroelectric random access memory (FRAM) due to its higher remanant polarization and the ability to withstand higher coercive fields. We first applied the damascene process using chemical mechanical polishing (CMP) to fabricate the PZT thin film capacitor to solve the problems of plasma etching including low etching profile and ion charging. The