Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Etch characteristics of ZnO thin films using an inductively coupled plasma

유도결합 플라즈마를 이용한 ZnO 박막의 식각 특성

  • Woo, Jong-Chang (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Gwan-Ha (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Kyoung-Tae (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Dong-Pyo (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Lee, Cheol-In (Ansan College of Technology) ;
  • Chang, Eui-Goo (School of Electrical and Electronics Engineering, Chung-Ang University)
  • 우종창 (중앙대학교 전자전기공학부) ;
  • 김관하 (중앙대학교 전자전기공학부) ;
  • 김경태 (중앙대학교 전자전기공학부) ;
  • 김창일 (중앙대학교 전자전기공학부) ;
  • 김동표 (중앙대학교 전자전기공학부) ;
  • 이철인 (안산공과대학 전기과) ;
  • 장의구 (중앙대학교 전자전기공학부)
  • Published : 2007.11.01
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Abstract

The etching characteristics of Zinc Oxide (ZnO) and etch selectivity of ZnO to $SiO_2\;in\;BCl_3$/Ar plasma were investigated. It was found that ZnO etch rate shows a non-monotonic behavior with increasing both Ar fraction in $BCl_3$ plasma, RF power, and gas pressure. The maximum ZnO etch rate of 50.3 nm/min was obtained for $BCl_3$ (80%)/Ar(20%) gas mixture. The plasmas were characterized using optical emission spectroscopy (OES) analysis measurements while chemical state of etched surfaces was investigated with X-ray photoelectron spectroscopy (XPS). From these data the suggestions on the ZnO etch mechanism were made.

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