Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2007.07a
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- Pages.1329-1330
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- 2007
The properties of Sb-doped $Ge_{1}Se_{1}Te_{2}$ thin films application for Phase-Change Random Access Memory
상변화 메모리 응용을 위한 Sb-doped $Ge_{1}Se_{1}Te_{2}$ 박막의 특성
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Nam, Ki-Hyeon
(Department of Electronic Materials Engineering, Kwangwoon University) ;
- Choi, Hyuk (Department of Electronic Materials Engineering, Kwangwoon University) ;
- Ju, Long-Yun (Department of Electronic Materials Engineering, Kwangwoon University) ;
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Chung, Hong-Bay
(Department of Electronic Materials Engineering, Kwangwoon University)
- Published : 2007.07.18
Abstract
Phase-change random access memory(PRAM) has many advantages compare with the existing memory. For example, fast programming speed, low programming voltage, high sensing margin, low power consume and long cyclability of read/write. Though it has many advantages, there are some points which must be improved. So, we invented and studied new constitution of
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