대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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고속 저 전압 BiCMOS LVDS 회로 설계에 관한 연구

A Study on Design of High Speed-Low Voltage LVDS Driver Circuit Using BiCMOS Technology

  • Lee, Jae-Hyun (Department of Electronic Engineering, Seokyeong Univ) ;
  • Yuk, Seung-Bum (Department of Electronic Engineering, Seokyeong Univ) ;
  • Koo, Yong-Seo (Electronics and Telecommunications Research Institute) ;
  • Kim, Kui-Dong (Electronics and Telecommunications Research Institute) ;
  • Kwon, Jong-Ki (Department of Electronic Engineering, Seokyeong Univ)
  • 발행 : 2006.06.21
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초록

This paper presents the design of LVDS(Low-Voltage-Differential-Signaling) driver circuit for Gb/s-per-pin operation using BiCMOS process technology. To reduce chip area, LVDS driver's switching devices were replaced with lateral bipolar devices. The designed lateral bipolar transister's common emitter current gain($\beta$) is 20 and device's emitter size is 2*10um. Also the proposed LVDS driver is operated at 2.5V and the maximum data rate is 2.8Gb/s approximately.

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