대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2006년도 하계종합학술대회
- /
- Pages.567-568
- /
- 2006
GaN 평면결함의 구조와 형성에너지에 관한 연구
Atomic structures and Energies of Planar defects in w-GaN
- Moon, Won-Ha (Central R&D Institute, Samsung Electro-Mechanics Co.) ;
- Choi, Chang-Hwan (Central R&D Institute, Samsung Electro-Mechanics Co.)
- 발행 : 2006.06.21
초록
We investigate the structures and the formation energy of inversion domain boundaries (IDBs) using the Tersoff empirical potential. Four kinds of IDBs ( A and B types for IDB* and Holt ) are considered. The IDBs with A type are energetically favorable compared to B type with the structural instability. The IDB* is also more stable than the Holt type in spite of fourfold and eightfold rings of bonds. We calculate the atomic configurations of the Holt IDBs induced by the interactions of the IDB* with the stacking faults
키워드