Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Plasma damage of MIS(TaN/$HfO_2$/Si) capacitor using antenna structure

Antenna structure를 이용한 MIS(TaN/$HfO_2$/Si) capacitor의 plasma damage 연구

  • Yang, Seung-Kook (School of Information and Communication Engineering Inha University) ;
  • Lee, Seung-Yong (School of Information and Communication Engineering Inha University) ;
  • Yu, Han-Suk (School of Information and Communication Engineering Inha University) ;
  • Kim, Han-Hyung (School of Information and Communication Engineering Inha University) ;
  • Song, Ho-Young (School of Information and Communication Engineering Inha University) ;
  • Lee, Jong-Geun (School of Information and Communication Engineering Inha University) ;
  • Park, Se-Geun (School of Information and Communication Engineering Inha University)
  • 양승국 (인하대학교 정보통신공학부) ;
  • 이승용 (인하대학교 정보통신공학부) ;
  • 유한석 (인하대학교 정보통신공학부) ;
  • 김한형 (인하대학교 정보통신공학부) ;
  • 송호영 (인하대학교 정보통신공학부) ;
  • 이종근 (인하대학교 정보통신공학부) ;
  • 박세근 (인하대학교 정보통신공학부)
  • Published : 2006.06.21
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Abstract

Plasma-induced charging damage was been measured during TaN gate electrode of MISFET(TaN/$HfO_2$/Si) or interconnection metal etching step using large antenna structures. The results of these experiments were obtained that $HfO_2$ gate dielectric layer was affected about plasma charging effects and damage increased with F-N tunneling. Therefore, the etching conditions should be optimized to avoid the defects caused by plasma charging.

Keywords