Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Enhanced THz emission from InAs quantum dots on a GaAs

InAs 양자점을 이용한 개선된 테라헤르츠 광원

  • Park, Hong-Kyu (NanoTeraHz Photonics Lab, Pohang University of Technology and Science) ;
  • Kim, Jeong-Hoi (NanoTeraHz Photonics Lab, Pohang University of Technology and Science) ;
  • Jung, Eun-A (NanoTeraHz Photonics Lab, Pohang University of Technology and Science) ;
  • Han, Hae-Wook (NanoTeraHz Photonics Lab, Pohang University of Technology and Science) ;
  • Choi, Won-Jun (Nano Device Research Center, KIST) ;
  • Lee, Jung-Il (Nano Device Research Center, KIST) ;
  • Song, Jin-Dong (Nano Device Research Center, KIST)
  • 박홍규 (포항공과대학교 나노테라 포토닉스 연구실) ;
  • 김정회 (포항공과대학교 나노테라 포토닉스 연구실) ;
  • 정은아 (포항공과대학교 나노테라 포토닉스 연구실) ;
  • 한해욱 (포항공과대학교 나노테라 포토닉스 연구실) ;
  • 최원준 (한국과학기술원 나노소자연구센터) ;
  • 이정일 (한국과학기술원 나노소자연구센터) ;
  • 송진동 (한국과학기술원 나노소자연구센터)
  • Published : 2006.06.21
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Abstract

Optically pumped THz emission has been observed in a wide range of semiconductors, and this process is an important practical source of pulsed THz radiation for time-domain THz spectroscopy and THz imaging. We show that InAs quantum dots on GaAs can be used to significantly enhance THz emission compared with a bare GaAs surface.

Keywords