Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2006.06a
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- Pages.517-518
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- 2006
Enhanced THz emission from InAs quantum dots on a GaAs
InAs 양자점을 이용한 개선된 테라헤르츠 광원
- Park, Hong-Kyu (NanoTeraHz Photonics Lab, Pohang University of Technology and Science) ;
- Kim, Jeong-Hoi (NanoTeraHz Photonics Lab, Pohang University of Technology and Science) ;
- Jung, Eun-A (NanoTeraHz Photonics Lab, Pohang University of Technology and Science) ;
- Han, Hae-Wook (NanoTeraHz Photonics Lab, Pohang University of Technology and Science) ;
- Choi, Won-Jun (Nano Device Research Center, KIST) ;
- Lee, Jung-Il (Nano Device Research Center, KIST) ;
- Song, Jin-Dong (Nano Device Research Center, KIST)
- 박홍규 (포항공과대학교 나노테라 포토닉스 연구실) ;
- 김정회 (포항공과대학교 나노테라 포토닉스 연구실) ;
- 정은아 (포항공과대학교 나노테라 포토닉스 연구실) ;
- 한해욱 (포항공과대학교 나노테라 포토닉스 연구실) ;
- 최원준 (한국과학기술원 나노소자연구센터) ;
- 이정일 (한국과학기술원 나노소자연구센터) ;
- 송진동 (한국과학기술원 나노소자연구센터)
- Published : 2006.06.21
Abstract
Optically pumped THz emission has been observed in a wide range of semiconductors, and this process is an important practical source of pulsed THz radiation for time-domain THz spectroscopy and THz imaging. We show that InAs quantum dots on GaAs can be used to significantly enhance THz emission compared with a bare GaAs surface.
Keywords