Improvement of Pentacene TFTs performance by surface treatment on Poly(4-vinylephenol) Gate insulator

Poly (4-vinylephenol) Gate 절연층의 표면 처리에 의한 Pentacene TFT의 성능 비교

  • Kim, Hong-Suk (Department of electronics engineering of Donga University) ;
  • Ahn, Seok-Keun (Department of electronics engineering of Donga University) ;
  • Xu, Yong-Xian (Department of electronics engineering of Donga University) ;
  • Hang, Seung-Bum (Kyungnam College of Information and Technology) ;
  • Song, Chung-Kun (Department of electronics engineering of Donga University)
  • Published : 2006.06.21

Abstract

In this paper, we could improve the mobility with OTS treatment on PVP gate, and also reduce the off-state current, which was usually large after OTS treatment, by using cosolvent. Also we treated Hexamethyl-disilazane (HMDS) and Ozone on PVP. It gives large off-state currents and on-currents.

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