Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Analysis of Physical Characteristics on Compound Semiconductor $B_{13}P_2$ using APCVD

  • Hong, K.K. (Dept. of Electrical and Computer Eng., University of Seoul) ;
  • Jung, Y.C. (Dept. of Electrical and Computer Eng., University of Seoul) ;
  • Kim, C.J. (Dept. of Electrical and Computer Eng., University of Seoul)
  • Published : 2006.06.21
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Abstract

Boron Phosphide films were deposited on (111) Si substrate at $650^{\circ}C$, by the reaction of B2H6 with PH3 using APCVD. N2 was carried out as carrier gas. The optimal gas rates were $20\;m{\ell}/min$ for B2H6, $60\;m{\ell}/min$ for PH3 and $1\;{\ell}/min$ for N2. After as grown the films were insitu annealed for 1hour in N2 ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the RMS is $29.626{\AA}$ for the reaction temperature at $650^{\circ}C$. The measurement of XRD shows that the films have the orientation of (101). Also, the measurement of AES is shown that the films have B13P2 stoichiometry.

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