대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)
- 대한전자공학회 2006년도 하계종합학술대회
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- Pages.467-468
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- 2006
높은 항복전압을 위한 InP 합성 채널 MHEMT의 성능과 특성에 대한 연구
Study of performance and characteristics of InP-composite channel MHEMT for High Breakdown Voltage
- 최석규 (동국대학교 밀리미터파 신기술 연구 센터) ;
- 백용현 (동국대학교 밀리미터파 신기술 연구 센터) ;
- 한민 (동국대학교 밀리미터파 신기술 연구 센터) ;
- 이성대 (동국대학교 밀리미터파 신기술 연구 센터) ;
- 이진구 (동국대학교 밀리미터파 신기술 연구 센터)
- Choi, Seok-Gyu (Millimeter-wave INnovation Research Center (MINT) Dongguk University) ;
- Beak, Young-Hyun (Millimeter-wave INnovation Research Center (MINT) Dongguk University) ;
- Han, Min (Millimeter-wave INnovation Research Center (MINT) Dongguk University) ;
- Lee, Seong-Dea (Millimeter-wave INnovation Research Center (MINT) Dongguk University) ;
- Rhee, Jin-Koo (Millimeter-wave INnovation Research Center (MINT) Dongguk University)
- 발행 : 2006.06.21
초록
To perform the comparative study, we experimented on two differential epitaxial structures, the conventional Metamorphic High Electron Mobility Transistor (MHEMT) using the InAlAs/InGaAs structure and the InP-composite channel MHEMT adopting the InAlAs/InGaAs/InP/n-InP structure. Compared to the conventional MHEMT, the InP-composite channel MHEMT shows improved breakdown performance; over about 3.5 V. This increased breakdown voltage can be explained by the lower impact ionization coefficient of the InP-composite channel MHEMT than that of the conventional MHEMT.
키워드