Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2006.08a
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- Pages.128-128
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- 2006
Mechanism of infinite $Si_3N_4/ArF$ PR etch selectivity during $CH_2F_2/H_2/Ar$ dual frequency capacitively coupled plasma etching of Si3N4 layers
- Published : 2006.08.01
Abstract
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