Effect of annealing temperature and ambient gases oil the phosphorus doped p-type ZnO

Hwang Dae-Kue (Department of Materials Science and Engineering & National Research Laboratory for Nanophotonic Semiconductor, Gwangju Institute of Science and Technology) ;
Oh Min-Suk (Department of Materials Science and Engineering & National Research Laboratory for Nanophotonic Semiconductor, Gwangju Institute of Science and Technology) ;
Lim Jae-Hong (Department of Materials Science and Engineering & National Research Laboratory for Nanophotonic Semiconductor, Gwangju Institute of Science and Technology) ;
Yang Eun-Jung (Department of Materials Science and Engineering & National Research Laboratory for Nanophotonic Semiconductor, Gwangju Institute of Science and Technology) ;
Kang Chang-Goo (Department of Materials Science and Engineering & National Research Laboratory for Nanophotonic Semiconductor, Gwangju Institute of Science and Technology) ;
Park Seong-Ju (Department of Materials Science and Engineering & National Research Laboratory for Nanophotonic Semiconductor, Gwangju Institute of Science and Technology)