Position dependence of Si delta doped layer in the barrier of InGaN/GaN single quantum well

  • Kwon Min-Ki (Department of Materials Science and Engineering & National Research Laboratory for Nanophotonic Semiconductors Gwangju Institute of Science and Technology) ;
  • Park Il-Kyu (Department of Materials Science and Engineering & National Research Laboratory for Nanophotonic Semiconductors Gwangju Institute of Science and Technology) ;
  • Kim Ja-Yeon (Department of Materials Science and Engineering & National Research Laboratory for Nanophotonic Semiconductors Gwangju Institute of Science and Technology) ;
  • Kim Jeom-Oh (Department of Materials Science and Engineering & National Research Laboratory for Nanophotonic Semiconductors Gwangju Institute of Science and Technology) ;
  • Seo Seong-Bum (Department of Materials Science and Engineering & National Research Laboratory for Nanophotonic Semiconductors Gwangju Institute of Science and Technology) ;
  • Park Seong-Ju (Department of Materials Science and Engineering & National Research Laboratory for Nanophotonic Semiconductors Gwangju Institute of Science and Technology) ;
  • Kang Sang-Won (Samsung Electro-Mechanics) ;
  • Min Kyeong-Ik (Samsung Electro-Mechanics) ;
  • Park Gil-Han (Samsung Electro-Mechanics)
  • 발행 : 2006.02.01