Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)
- 2006.05a
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- Pages.894-897
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- 2006
Spatial Distribution of Injected Charge Carriers in SONOS Memory Cells
- Kim Byung-Cheul (Dept. of Electronic Engineering, Jinju National University) ;
- Seob Sun-Ae (Samsung Advanced Institute of Technology)
- Published : 2006.05.01
Abstract
Spatial distribution of injected electrons and holes is evaluated by using single-junction charge pumping technique in SONOS(Poly-silicon/Oxide/Nitride/Oxide/Silicon) memory cells. Injected electron are limited to length of ONO(Oxide/Nitride/oxide) region in locally ONO stacked cell, while are spread widely along with channel in fully ONO stacked cell. Hot-holes are trapped into the oxide as well as the ONO stack in locally ONO stacked cell.
Keywords
- SONOS Memory;
- Locally ONO stacked Cell;
- Single-Junction Charge Pumping Technique;
- Spatial Distribution