한국반도체및디스플레이장비학회:학술대회논문집 (Proceedings of the Korean Society Of Semiconductor Equipment Technology)
- 한국반도체및디스플레이장비학회 2006년도 추계학술대회 발표 논문집
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- Pages.198-201
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- 2006
Deep RIE(reactive ion etching)를 이용한 가스 유량센서 제작
- Lee, Yeong-Tae ;
- An, Gang-Ho ;
- Gwon, Yong-Taek (HCT) ;
- Takao, Hidekuni (Toyohashi University of Technology) ;
- Ishida, Makoto (Toyohashi University of Technology)
- 발행 : 2006.10.12
초록
In this paper, we fabricated drag force type and pressure difference type gas flow sensor with dry etching technology which used Deep RIE(reactive ion etching) and etching stop technology which used SOI(silicon-on-insulator). we fabricated four kinds of sensor, which are cantilever, paddle type, diaphragm, and diaphragm with orifice type. Both cantilever and paddle type flow sensors have similar sensitivity as 0.03mV/V kPa. Sensitivity of the fabricated diaphragm and diaphragm with orifice type sensor were relatively high as about 3.5mV/V kPa, 1.5mV/V kPa respectively.
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