한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

Poly-Si, TEOS, SiN 막질의 CMP 공정 중의 연마입자 오염 특성 평가.

The Adhesion of Abrasive Particle during Poly-Si, TEOS and SiN CMP

  • 김진영 (한양대학교 재료화학공학부) ;
  • 홍의관 (한양대학교 재료화학공학부) ;
  • 박진구 (한양대학교 재료화학공학부)
  • 발행 : 2006.06.22
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초록

The purpose of this study was to investigate the root cause of adhesion of silica and ceria particles during Poly-Si, TEOS, and SiN CMP process, respectively. The zeta-potentials of abrasive particles and wafers were observed negative surface charges in the alkaline solutions. SAC and STI patterned wafers have intermediate values of their composition surface's zeta potentials. The theoretical interaction force and adhesion force of silica and ceria particle were calculated in solution with acidic, neutral and alkaline pH. A stronger attractive force was calculated for silica and ceria particles on wafers in acidic solutions than in alkaline solutions. The theoretical interaction forces of the SAC and STI patterned wafers have intermediate values of their constitution wafer's values. The adhesion forces is observed lower values in alkaline solutions than in acidic solutions. And the ceria particle has lower adhesion than that of the silica particle.

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