Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.06a
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- Pages.467-468
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- 2006
Fabricated thin-film transistors with P3HT channel and $NiO_x$ electrodes
P3HT와 IZO 전극을 이용한 thin film transistors 제작
- Kang, Hee-Jin (Yonsei University) ;
- Han, Jin-Woo (Yonsei University) ;
- Kim, Jong-Yeon (Yonsei University) ;
- Moon, Hyun-Chan (KETI) ;
- Park, Gwang-Bum (KETI) ;
- Kim, Tae-Ha (KETI) ;
- Seo, Dae-Shik (Yonsei University)
- 강희진 (연세대학교 전기전자공학과) ;
- 한진우 (연세대학교 전기전자공학과) ;
- 김종연 (연세대학교 전기전자공학과) ;
- 문현찬 (전자부품연구원) ;
- 박광범 (전자부품연구원) ;
- 김태하 (전자부품연구원) ;
- 서대식 (연세대학교 전기전자공학과)
- Published : 2006.06.22
Abstract
We report on the fabrication of P3HT-based thin-film transistors (TFT) that consist of indium-zinc-oxide (IZO), PVP (poly-vinyl phenol), and Ni for the source-drain (S/D) electrode, gate dielectric, and gate electrode, respectively. The IZO S/D electrodes of which the work function is well matched to that of P3HT were deposited on a P3HT channel by thermal evaporation of IZO and showed a moderately low but still effective transmittance of ~25% in the visible range along with a good sheet resistance of