한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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- Pages.350-351
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- 2006
$RuO_2$ 후막저항을 이용한 압력센서의 출력특성 개선
Sensing Mechanism Property of $RuO_2$ Thick Film Resistor.
- Lee, Seong-Jae (Daelim College) ;
- Park, Ha-Young (Sam Chuk Univ.) ;
- Min, Nam-Ki (Korea Univ.)
- 발행 : 2006.06.22
초록
Thick film mechanical sensors can be categorized into four main areas piezoresistive, piezoelectric, capacitive and mechanic tube. In this areas, the thick film strain gage is the earliest example of a primary sensing element based on the substrates. The latest thick film sensor is used various pastes that have been specifically developed for pressure sensor application. Some elastic materials exhibit a change in bulk resistivity when they are subjected to displacement by an applied pressure. This property is referred to as piezoresistivity and is a major factor influencing the sensitivity of a piezoresistive strain gage. The effect of thick film resistors was first noticed in the early 1970, as described by Holmes in his paper in 1973.