Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.06a
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- Pages.350-351
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- 2006
Sensing Mechanism Property of $RuO_2$ Thick Film Resistor.
$RuO_2$ 후막저항을 이용한 압력센서의 출력특성 개선
- Lee, Seong-Jae (Daelim College) ;
- Park, Ha-Young (Sam Chuk Univ.) ;
- Min, Nam-Ki (Korea Univ.)
- Published : 2006.06.22
Abstract
Thick film mechanical sensors can be categorized into four main areas piezoresistive, piezoelectric, capacitive and mechanic tube. In this areas, the thick film strain gage is the earliest example of a primary sensing element based on the substrates. The latest thick film sensor is used various pastes that have been specifically developed for pressure sensor application. Some elastic materials exhibit a change in bulk resistivity when they are subjected to displacement by an applied pressure. This property is referred to as piezoresistivity and is a major factor influencing the sensitivity of a piezoresistive strain gage. The effect of thick film resistors was first noticed in the early 1970, as described by Holmes in his paper in 1973.