Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Influence of Gd Substitution on the Morphological, Structural and Ferroelectric Properties of $Bi_4Ti_3O_{12}$ Thin Films Obtained by Sol-Gel Method

Sol-Gel법으로 증착된 $Bi_4Ti_3O_{12}$ 박막의 형태적, 구조적 특성과 강유전성에 Gadolinium 치환이 미치는 효과

  • Kang, Dong-Kyun (Department of Materials Science and Engineering, Korea Univ.) ;
  • Kim, Byong-Ho (Department of Materials Science and Engineering, Korea Univ.)
  • Published : 2006.06.22
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Abstract

Gadolinium-substituted bismuth titanate, $Bi_{3.3}Gd_{0.7}Ti_3O_{12}$ (BGT), thin films were successfully fabricated on Pt(111)/Ti/$SiO_2$/Si substrates by a sol-gel method and their structural and ferroelectric properties have been characterized. Fabricated BGT thin films were found to be random orientations, which were confirmed by X-ray diffraction experiment and scanning electron microscope analysis. The remanent polarization ($2P_r$)) of BGT thin film annealed at $720^{\circ}C$ was $25.85\;{\mu}C/cm^2$ at an applied voltage of 5 V. The BGT thin films exhibited a 11 % reduction in their switching charge after no less than $10^{11}$ switching cycles at a frequency of 1 MHz.

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