한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
- /
- Pages.309-310
- /
- 2006
Li:ZnO를 이용하여 제조한 FBAR의 열처리 온도에 따른 주파수 특성
Frequency characteristics of Li doped ZnO thin film resonator annealed by various temperatures
- 김봉석 (성균관대학교 정보통신공학과) ;
- 김응권 (성균관대학교 정보통신공학과) ;
-
황현석
(성균관대학교 정보통신공학과) ;
-
강현일
(성균관대학교 정보통신공학과) ;
-
이규일
(성균관대학교 정보통신공학과) ;
- 이태용 (성균관대학교 정보통신공학과) ;
- 송준태 (성균관대학교 정보통신공학과)
- Kim, Bong-Seok (Department of Information and Communication, Sungkyunkwan University) ;
- Kim, Eung-Kwon (Department of Information and Communication, Sungkyunkwan University) ;
-
Hwang, Hyun-Suk
(Department of Information and Communication, Sungkyunkwan University) ;
-
Kang, Hyun-Il
(Department of Information and Communication, Sungkyunkwan University) ;
-
Lee, Kyu-Il
(Department of Information and Communication, Sungkyunkwan University) ;
- Lee, Tae-Yong (Department of Information and Communication, Sungkyunkwan University) ;
- Song, Joon-Tae (Department of Information and Communication, Sungkyunkwan University)
- 발행 : 2006.06.22
초록
In this paper, frequency characteristic of FBAR was studied as a function of annealing temperature. we have used Li dopant to enhance electrical properties of ZnO thin film. Li:ZnO thin film was deposited on Al(300 nm)/