Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.06a
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- Pages.192-193
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- 2006
Study on Characteristic difference of Semiconductor Radiation Detectors fabricated with a wet coating process
- Choi, Chi-Won (Department of Medical Imaging Sciense in Inje University) ;
- Cho, Sung-Ho (Dept. of Biomedical Engineering in Inje University) ;
- Yun, Min-Suk (Dept. of Biomedical Engineering in Inje University) ;
- Kang, Sang-Sik (Radiation Image Lab in Inje University) ;
- Park, Ji-Koon (Medical Imaging Research Center in Inje University) ;
- Nam, Sang-Hee (Medical Imaging Research Center in Inje University)
- Published : 2006.06.22
Abstract
The wet coating process could easily be made from large area film with printing paste mixed with semiconductor and binder material at room temperature. Semiconductor film fabricated about 25mm thickness was evaluated by field emissions-canning electron microscopy (FE-SEM). X-ray performance data such as dark current, sensitivity and signal to noise ratio (SNR) were evaluated. The
Keywords
- Semiconductor;
- $HgI_2$(mercuric iodide);
- PbO (lead oxide);
- $PbI_2$ (lead iodide);
- CdTe (cadmium tellurium)