Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.06a
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- Pages.57-58
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- 2006
Characterization of Electrolyte in Electrochemical Mechanical Planarization
Cu ECMP 공정에서의 전해질 특성평가
- Kwon, Tae-Young (Hanyang Univ.) ;
- Kim, In-Kwon (Hanyang Univ.) ;
- Park, Jin-Goo (Hanyang Univ.)
- Published : 2006.06.22
Abstract
Chemical-mechanical planarization (CMP) of Cu has used currently in semiconductor process for multilevel metallization system. This process requires the application of a considerable down-pressure to the sample in the polishing, because porous low-k films used in the Cu-multilevel interconnects of 65nm technology node are often damaged by mechanical process. Also, it make possible to reduce scratches and contaminations of wafer. Electrochemical mechanical planarization (ECMP) is an emerging extension of CMP. In this study, the electrochemical mechanical polisher was manufactured. And the static and dynamic potentiodynamic curve of Cu were measured in KOH based electrolyte and then the suitable potential was found.