한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

ZnO buffer layer 제작과 c-축 배향성 향상으로 인한 FBAR 성능 개선에 관한 연구

Performance of FBAR devices was enhanced by fabrication of ZnO buffer layer and improvement of c-axis orientation

  • Lee, Soon-Bum (Department of Electric and Electronics Engineering in Kyungwon Univ.) ;
  • Park, Sung-Hyun (Department of Electric and Electronics Engineering in Kyungwon Univ.) ;
  • Kwon, Sang-Jik (Department of Electric and Electronics Engineering in Kyungwon Univ.) ;
  • Lee, Neung-Heon (Department of Electric and Electronics Engineering in Kyungwon Univ.) ;
  • Shin, Young-Hwa (Department of Electric and Electronics Engineering in Kyungwon Univ.)
  • 발행 : 2006.11.09
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초록

In this study, we tried to Improve c-axis orientation of ZnO thin films used in a piezoelectric layer of FBAR devices. First. ZnO deposition conditions were determined by changing various conditions of RF sputter such as RF power, pressure and $O_2$ contents. The Piezoelectric layer was deposited on ZnO buffer layer of dense structure which was formed by ALD equipment. The c-axis orientation of ZnO piezoelectric layer was measured by XRD and we confirmed fine Grains and columnar structure by SEM, AFM.

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