한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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- Pages.147-148
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- 2006
Memory Characteristics of MOS Capacitors Embedded with Ge Nanocrystals in $HfO_2$ Layers by Ion Implantation
- Lee, Hye-Ryoung (Korea Univ.) ;
- Choi, Sam-Jong (Korea Univ.) ;
- Cho, Kyoung-Ah (Korea Univ.) ;
- Kim, Sang-Sig (Korea Univ.)
- 발행 : 2006.11.09
초록
Ge nanocrystals(NCs)-embedded MOS capacitors are charactenzed in this work using capacitance-voltage measurement. High-k dielectrics