Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.11a
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- Pages.15-16
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- 2006
Stress Dependence of Thermal Stability of Nickel Silicide for Nano MOSFETs
- Zhang, Ying-Ying (Chungnam National University) ;
- Lim, Sung-Kyu (National Nanofab Center) ;
- Lee, Won-Jae (Chungnam National University) ;
- Zhong, Zhun (Chungnam National University) ;
- Li, Shi-Guang (Chungnam National University) ;
- Jung, Soon-Yen (Chungnam National University) ;
- Lee, Ga-Won (Chungnam National University) ;
- Wang, Jin-Suk (Chungnam National University) ;
- Lee, Hi-Deok (Chungnam National University)
- Published : 2010.04.01
Abstract
The thermal stability of nickel silicide with compressively and tensilely stressed nitride capping layer has been investigated in this study. The Ni (10 nm) and Ni/Co/TiN (7/3/25 nm) structures were deposited on the p-type Si substrate. The stressed capping layer was deposited using plasma enhanced chemical vapor deposition (PECVD) after silicide formation by one-step rapid thermal process (RTP) at