한국정보디스플레이학회:학술대회논문집
- 2006.08a
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- Pages.1705-1708
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- 2006
Development of nanocrystalline silicon thin film transistors with low-leakage and high stability for AMOLED displays
- Templier, Francois (CEA-LETI, Departement IHS) ;
- Oudwan, Maher (CEA-LETI, Departement IHS) ;
- Venin, Claude (CEA-LETI, Departement IHS) ;
- Villette, Jerome (Unaxis France) ;
- Elyaakoubi, Mustapha (Unaxis France) ;
- Dimitriadis, C.A. (Department of Physics, Aristotle University of Thessaloniki)
- Published : 2006.08.22
Abstract
Nanocrystalline silicon (nc-Si) based TFTs were developed using a conventional PECVD production system. Devices exhibit very interesting characteristics, in particular when using a bi-layer structure which reduces leakage current and improves subthreshold area. Good stability and low leakage current make these devices suitable for the fabrication of low-cost and high performance AMOLED displays.
Keywords