한국정보디스플레이학회:학술대회논문집

한국정보디스플레이학회 (The Korean Infomation Display Society)
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MOCVD grown Zinc Oxide Thin-Film Transistor

  • Jeong, Eui-Hyuck (Dept. of Electrical and Computer Engineering, Ajou University) ;
  • Seo, Hyun-Seok (Dept. of Electrical and Computer Engineering, Ajou University) ;
  • Seo, O-Gweon (NFC, Samsung Advanced Institute of Technology) ;
  • Choi, Yearn-Ik (Dept. of Electrical and Computer Engineering, Ajou University) ;
  • Jo, Jung-Yol (Dept. of Electrical and Computer Engineering, Ajou University)
  • 발행 : 2006.08.22
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초록

Zinc oxide (ZnO) is typically highly doped n-type semiconductor. To be used for thin-film transistor (TFT) devices, carrier concentration must be controlled precisely. We studied characteristics of ZnO grown by MOCVD at temperatures between $200^{\circ}C$ and $400^{\circ}C$. We found that hydrogen incorporated during growth plays important role in determining carrier density.

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