한국정보디스플레이학회:학술대회논문집
- 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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- Pages.487-490
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- 2006
Effect of Side Chain Structure of Gate Insulator on Characteristics of Organic Thin Film Transistor
- Yi, Mi-Hye (Advanced Materials Division, Korea Research Institute of Chemical Technology, Konkuk University) ;
- Ha, Sun-Young (Advanced Materials Division, Korea Research Institute of Chemical Technology, Konkuk University) ;
- Pyo, Seung-Moon (Department of Chemistry, Konkuk University)
- 발행 : 2006.08.22
초록
We propose a new method to achieve well-defined surface properties of the polymeric gate dielectrics without using SAM technique and inserting another organic/inorganic buffer layer. Pentacene thin film transistors(OTFTs) fabricated with the polyimide gate insulators with different side chain structures were demonstrated. Further, a relationship between the surface properties (surface morphology, surface energy, etc) of the films and the performance of OTFTs have investigated, which will be given in more detail in presentation.
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