Optimization of H-IPS Structure for High Aperture Ratio.

  • 발행 : 2006.08.22

초록

We designed the H-IPS that has similar aperture ratio to the AS-IPS with organic insulator. To improve the aperture ratio without organic insulator, we positioned the pixel electrode over the preceding gate on the base of the H-IPS structure, and minimized the width of pixel and common electrodes. Without the additional process, we could obtain the similar brightness with that of AS-IPS in 15inch SXGA+ Panel.

키워드