대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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- Pages.158-159
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- 2006
H2/N2 가스론 이용한 CCP 플라즈마 모델링
Modeling of CCP plasma with H2/N2 gas
- 손채화 (한국전기연구원 전기물리그룹)
- Shon, Chae-Hwa (Electrophyscis group, Korea Electrotechnology Research Institute)
- 발행 : 2006.10.27
초록
The resistance-capacitance (RC) delay of signals through interconnection materials becomes a big hurdle for high speed operation of semiconductors which contain multilayer interconnection layers. In order to reduce the RC delay, low-k materials will be used for inter-metal dielectric (IMD) materials. We have developed self-consistent simulation tool that includes neutral-species transport model, based on the relaxation continuum (RCT) model. We present the parametric study of the modeling results of a two-frequency capacitively coupled plasma (2f-CCP) with
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