As 토핑된 p형 ZnO 박막의 특성 분석

Characterization of arsenic doped p-type ZnO thin film

  • 김동림 (연세대학교 전기전자공학과) ;
  • 김건희 (연세대학교 전기전자공학과) ;
  • 장현우 (연세대학교 전기전자공학과) ;
  • 안병두 (연세대학교 전기전자공학과) ;
  • 이상렬 (연세대학교 전기전자공학과)
  • Kim, Dong-Lim (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Kim, Gun-Hee (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Chang, Hyun-Woo (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Ahn, Byung-Du (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Lee, Sang-Yeol (Department of Electrical and Electronic Engineering, Yonsei University)
  • 발행 : 2006.10.27

초록

Arsenic doped p-type ZnO thin films have been realized on intrinsic (100) GaAs substrate by RF magnetron sputtering and thermal annealing treatment. p-Type ZnO exhibits the hole concentration of $9.684{\times}10^{19}cm^3$, resistivity of $2.54{\times}10^{-3}{\Omega}cm$, and mobility of $25.37\;cm^2/Vs$. Photoluminescence (PL) spectra of As doped p-type ZnO thin films reveal neutral acceptor bound exciton ($A^{0}X$) of 3.3437 eV and a transition between free electrons and acceptor levels (FA) of 3.2924 eV. Calculated acceptor binding energy ($E_A$) is about 0.1455 eV. Thermal activation and doping mechanism of this film have been suggested by using X-ray photoelectron spectroscopy (XPS). p-Type formation mechanism of As doped ZnO thin film is more related to the complex model, namely, $As_{Zn}-2V_{Zn}$, in which the As substitutes on the Zn site, rather than simple model, Aso, in which the As substitutes on the O site. ZnO-based p-n junction was fabricated by the deposition of an undoped n-type ZnO layer on an As doped p-type ZnO layer.

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