대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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- Pages.53-54
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- 2006
As 토핑된 p형 ZnO 박막의 특성 분석
Characterization of arsenic doped p-type ZnO thin film
- 김동림 (연세대학교 전기전자공학과) ;
- 김건희 (연세대학교 전기전자공학과) ;
- 장현우 (연세대학교 전기전자공학과) ;
- 안병두 (연세대학교 전기전자공학과) ;
- 이상렬 (연세대학교 전기전자공학과)
- Kim, Dong-Lim (Department of Electrical and Electronic Engineering, Yonsei University) ;
- Kim, Gun-Hee (Department of Electrical and Electronic Engineering, Yonsei University) ;
- Chang, Hyun-Woo (Department of Electrical and Electronic Engineering, Yonsei University) ;
- Ahn, Byung-Du (Department of Electrical and Electronic Engineering, Yonsei University) ;
- Lee, Sang-Yeol (Department of Electrical and Electronic Engineering, Yonsei University)
- 발행 : 2006.10.27
초록
Arsenic doped p-type ZnO thin films have been realized on intrinsic (100) GaAs substrate by RF magnetron sputtering and thermal annealing treatment. p-Type ZnO exhibits the hole concentration of
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