Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2006.10a
- /
- Pages.53-54
- /
- 2006
Characterization of arsenic doped p-type ZnO thin film
As 토핑된 p형 ZnO 박막의 특성 분석
- Kim, Dong-Lim (Department of Electrical and Electronic Engineering, Yonsei University) ;
- Kim, Gun-Hee (Department of Electrical and Electronic Engineering, Yonsei University) ;
- Chang, Hyun-Woo (Department of Electrical and Electronic Engineering, Yonsei University) ;
- Ahn, Byung-Du (Department of Electrical and Electronic Engineering, Yonsei University) ;
- Lee, Sang-Yeol (Department of Electrical and Electronic Engineering, Yonsei University)
- 김동림 (연세대학교 전기전자공학과) ;
- 김건희 (연세대학교 전기전자공학과) ;
- 장현우 (연세대학교 전기전자공학과) ;
- 안병두 (연세대학교 전기전자공학과) ;
- 이상렬 (연세대학교 전기전자공학과)
- Published : 2006.10.27
Abstract
Arsenic doped p-type ZnO thin films have been realized on intrinsic (100) GaAs substrate by RF magnetron sputtering and thermal annealing treatment. p-Type ZnO exhibits the hole concentration of
Keywords