Proceedings of the Polymer Society of Korea Conference (한국고분자학회:학술대회논문집)
- 2006.10a
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- Pages.176-176
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- 2006
Photobleaching Nonchemically Amplified Photoresists
- Kim, Jin-Baek (Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST)) ;
- Ganesan, Ramakrishnan (Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST)) ;
- Kim, Kyoung-Seon (Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST)) ;
- Choi, Jae-Hak (Advanced Radiation Technology Institute, Korea Atomic Energy Research Institute)
- Published : 2006.10.13
Abstract
We designed and synthesized new type of nonchemically amplified polymeric and molecular resists and studied their lithographic performance. The polymeric resists [poly(DOBEMA-co-GBLMA)] show very high degree of photobleaching at 248 nm and moderate to good degree of photobleaching at 193 nm. The molecular resist (CDEOPE-POSS) shows high degree of photobleaching at 248 nm and modetate degree of photobleaching at 193 nm. CDEOPE-POSS possesses very high oxygen reactive ion etching resistance, which makes it suitable to be used as a bilayer resist. The lithographic studies of these resist materials suggest the feasibility of these materials to be used as single and bilayer resists.
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