A Study on ZnSe/GaAs Heterojunction Solar Cells Grown by MBE

MBE법으로 제작한 ZnSe/GaAs 이종접합 태양전지에 관한 연구

  • 이홍찬 (한국해양대학교 선박전자기계공학부) ;
  • 이상태 (한국해양대학교 선박전자기계공학부) ;
  • 오진석 (한국해양대학교 선박전자기계공학부) ;
  • 김윤식 (한국해양대학교 전기전자공학부) ;
  • 장지호 (한국해양대학교 반도체물리학부)
  • Published : 2006.06.22

Abstract

We report a study of Zn(S)Se/GaAs heterojunction solar cells grown by molecular beam epitaxy (MBE). Zn(S)Se/GaAs heterostructures prepared under different conditions were characterized in-situ by reflection high-energy electron diffraction (RHEED). Structural and electrical properties were investigated with double crystal X-ray diffraction and current-voltage characteristics, respectively. The fabricated $n-ZnS_{0.07}Se_{0.93}/p-GaAs$ solar cell (SC #2) exhibited open circuit voltage($V_{oc}$) of 0.37 V, short circuit current($I_{sc}$) of $1.7{\times}10^{-2}$ mA, fill factor of 0.62 and conversion efficiency of 7.8 % under 38.5 $mW/cm^2$ illumination.

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