Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2006.07c
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- Pages.1424-1425
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- 2006
Effects of a four-step rapid thermal annealing process on the condition of ramping up
Ramping up 조건에 따른 four-step RTP공정의 효과
- Lee, Hyun-Ki (Chung-Ang University) ;
- Kim, Nam-Hoon (Chosun University) ;
- Lee, Woo-Sun (Chosun University) ;
- Kim, Sang-Yong (Chung-Ang University) ;
- Chang, Eui-Goo (Chung-Ang University)
- Published : 2006.07.12
Abstract
A four-step rapid thermal annealing (RTA) process is proposed in order to improve the throughput and stabilize the process, compared to the six-step RTA process. Effects of annealing on the properties of a structure mode of CMOS process in both cases were investigated. The implanted dopant(As,
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