대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

정전기 보호를 위한 n형 SCR 소자의 래치업 특성

Latchup Characteristics of N-Type SCR Device for ESD Protection

  • Seo, Y.J. (Electrical Engineering Department of Daebul University) ;
  • Kim, K.H. (Magnachip Semiconductor) ;
  • Lee, W.S. (Chosun University)
  • 발행 : 2006.07.12
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초록

An electrostatic discharge (ESD) protection device, so called, N-type SCR with P-type MOSFET pass structure (NSCR_PPS), was analyzed for high voltage I/O applications. A conventional NSCR_PPS device shows typical SCR-like characteristics with extremely low snapback holding voltage, which may cause latchup problem during normal operation. However, a modified NSCR_PPS device with proper junction/channel engineering demonstrates highly latchup immune current- voltage characteristics.

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