Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2006.07c
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- Pages.1341-1342
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- 2006
Electrical characteristics of Field Effect Thin Film Transistors with p-channels of CdTe/CdHgTe Core-Shell Nanocrystals
CdTe/CdHgTe 코어쉘 나노입자를 이용한 P채널 전계효과박막트렌지스터의 전기적특성
- Kim, Dong-Won (Department of Electronic and Electrical Engineering and institute for Nano Science, Korea University) ;
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Cho, Kyoung-Ah
(Department of Electronic and Electrical Engineering and institute for Nano Science, Korea University) ;
- Kim, Hyun-Suk (Department of Electronic and Electrical Engineering and institute for Nano Science, Korea University) ;
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Kim, Sang-Sig
(Department of Electronic and Electrical Engineering and institute for Nano Science, Korea University)
- 김동원 (고려대학교 전자전기공학과, 나노과학연구소) ;
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조경아
(고려대학교 전자전기공학과, 나노과학연구소) ;
- 김현석 (고려대학교 전자전기공학과, 나노과학연구소) ;
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김상식
(고려대학교 전자전기공학과, 나노과학연구소)
- Published : 2006.07.12
Abstract
Electrical characteristics of field-effect thin film transistors (TFTs) with p-channels of CdTe/CdHgTe core-shell nanocrystals are investigated in this paper. For the fabrication of bottom- and top-gate TFTs, CdTe/CrHgTe nanocrystals synthesized by colloidal method are first dispersed on oxidized p+ Si substrates by spin-coating, the dispersed nanoparticles are sintered at
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